Title :
Through silicon via time domain crosstalk modeling considering hysteretic coupling capacitance
Author :
Piersanti, S. ; de Paulis, F. ; Orlandi, A. ; Kim, Dong-Hyun ; Cho, Jonghyun ; Kim, Joungho
Author_Institution :
UAq EMC Laboratory, University of L´Aquila, Via G. Gronchi 18, Loc. Pile, 67100, Italy
Abstract :
The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed.
Keywords :
Capacitance; Capacitance measurement; Through-silicon vias; Through Silicon Vias; circuit modeling; hysteresis; non linear effects; time domain modeling;
Conference_Titel :
Electromagnetic Compatibility (EMC), 2015 IEEE International Symposium on
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4799-6615-8
DOI :
10.1109/ISEMC.2015.7256225
