DocumentCode
2210949
Title
Through silicon via time domain crosstalk modeling considering hysteretic coupling capacitance
Author
Piersanti, S. ; de Paulis, F. ; Orlandi, A. ; Kim, Dong-Hyun ; Cho, Jonghyun ; Kim, Joungho
Author_Institution
UAq EMC Laboratory, University of L´Aquila, Via G. Gronchi 18, Loc. Pile, 67100, Italy
fYear
2015
fDate
16-22 Aug. 2015
Firstpage
567
Lastpage
572
Abstract
The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed.
Keywords
Capacitance; Capacitance measurement; Through-silicon vias; Through Silicon Vias; circuit modeling; hysteresis; non linear effects; time domain modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (EMC), 2015 IEEE International Symposium on
Conference_Location
Dresden, Germany
Print_ISBN
978-1-4799-6615-8
Type
conf
DOI
10.1109/ISEMC.2015.7256225
Filename
7256225
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