Temperature stimulated reverse annealing of neutron induced damage in high resistivity silicon detectors

Neutron irradiated high resistivity silicon detectors have been subjected to elevated temperature annealing´s (ETA). It has been found that both detector full depletion voltage and leakage current exhibit reverse annealing behavior for highly irradiated detectors: they increase with ETA. Laser induced current shapes have indicated a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Data of current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have shown that the dominant microscopic effect is the increase of a level at 0.39 eV