DocumentCode
2211238
Title
3-D silicon technology for nano-electronics
Author
Kim, Kinam ; Jung, Soon-Moon
Author_Institution
Samsung Electron. Co. Ltd, Yongin
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
84
Lastpage
85
Abstract
As the incumbent planar silicon technologies enter into deep nano scale dimension, it reveals many issues which are believed to be very difficult to be solved within incumbent technologies. Many exotic technologies seem to be not ready to take over the silicon technology. Thus the 3-D silicon technology is the only solution and fortunately in 3-D silicon technology the knowledge and experiences learned from 2-D planar technology over the 30 years can be fully utilized so that 3-D technology will be quickly established. Furthermore, when 3-D silicon technology facilitates with new materials and new concepts, 3-D silicon technology will be the center of technology in merging NT, BT, IT and others.
Keywords
elemental semiconductors; nanoelectronics; silicon; 2D planar technology; 3D silicon technology; Si; Si - Element; deep nano scale dimension; nanoelectronics; planar silicon technologies; Biomedical optical imaging; Capacitors; Data processing; Isolation technology; Lithography; Random access memory; Semiconductor device noise; Silicon; Stacking; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388700
Filename
4388700
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