• DocumentCode
    2211238
  • Title

    3-D silicon technology for nano-electronics

  • Author

    Kim, Kinam ; Jung, Soon-Moon

  • Author_Institution
    Samsung Electron. Co. Ltd, Yongin
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    As the incumbent planar silicon technologies enter into deep nano scale dimension, it reveals many issues which are believed to be very difficult to be solved within incumbent technologies. Many exotic technologies seem to be not ready to take over the silicon technology. Thus the 3-D silicon technology is the only solution and fortunately in 3-D silicon technology the knowledge and experiences learned from 2-D planar technology over the 30 years can be fully utilized so that 3-D technology will be quickly established. Furthermore, when 3-D silicon technology facilitates with new materials and new concepts, 3-D silicon technology will be the center of technology in merging NT, BT, IT and others.
  • Keywords
    elemental semiconductors; nanoelectronics; silicon; 2D planar technology; 3D silicon technology; Si; Si - Element; deep nano scale dimension; nanoelectronics; planar silicon technologies; Biomedical optical imaging; Capacitors; Data processing; Isolation technology; Lithography; Random access memory; Semiconductor device noise; Silicon; Stacking; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388700
  • Filename
    4388700