Linear RF polar modulated SiGe Class E and F power amplifiers

Author

Kitchen, Jennifer Desai ; Deligoz, Ilker ; Kiaei, Sayfe ; Bakkaloglu, Bertan

Author_Institution

Dept. of Electr. Eng., Connection One Res. Center, Tempe, AZ

fYear

2006

fDate

11-13 June 2006

Abstract

Two fully-integrated linearized polar modulated class E and F power amplifiers (PA) with switch-mode supply modulation are presented. The PAs are implemented in a 0.18mum SiGe BiCMOS process and can be used to transmit varying envelope RF signals operating at 870-920MHz. The class E PA gives a peak output power of 26.4dBm and a maximum efficiency of 62%. The class F PA gives peak output power of 23dBm with 53 % drain efficiency. When using delta modulation to control the switch-mode supply, the class F and E polar amplifiers give ACPRs for an EDGE input waveform (at 400kHz offset) of -46dBc and -37.7dBc respectively

Keywords

BiCMOS integrated circuits; UHF power amplifiers; delta modulation; switched mode power supplies; 0.18 micron; 400 kHz; 870 to 920 MHz; BiCMOS process; SiGe; class E polar amplifiers; class F polar amplifiers; delta modulation; linear RF polar modulated power amplifiers; switch-mode supply modulation; Bandwidth; Delta modulation; Germanium silicon alloys; Low pass filters; Power amplifiers; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651182

Filename

1651182