DocumentCode
2211373
Title
High power LDMOS integrated Doherty amplifier for W-CDMA
Author
Blednov, I.I. ; Van der Zanden, Jos
Author_Institution
Philips Semicond.
fYear
2006
fDate
11-13 June 2006
Abstract
To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performance: 42% Eff has been measured at IMD3 level of -40dBc. Further improvement of linearity to below -50dBc was provided by digital pre-distortions. We believe this approach can be used to achieve powers above 120W. Moreover this approach will lead to a lower cost, more reliable and manufacturable Doherty product
Keywords
MMIC power amplifiers; code division multiple access; semiconductor device packaging; 10 W; Doherty amplifier; LDMOS; MMIC; W-CDMA; standard SOT502 package; Costs; High power amplifiers; Impedance; Linearity; MMICs; Multiaccess communication; Power amplifiers; Power system reliability; Semiconductor device packaging; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-9572-7
Type
conf
DOI
10.1109/RFIC.2006.1651183
Filename
1651183
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