SiGe integrated mm-wave push-push VCOs with reduced power consumption

Author

Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R.

Author_Institution

Technische Univ. Munchen

fYear

2006

fDate

11-13 June 2006

Abstract

For use in automotive radar applications we have designed and fabricated several push-push VCOs within the frequency range 67 to 75 GHz. In this paper we present one of these oscillators which can be tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 it 0.4 dBm with an DC to RF efficiency eta = 1.6%. The measured single sideband phase noise is below - 105dBc/Hz at 1MHz offset frequency. With a reduced supply voltage the efficiency can be increased to eta = 3.5 % with an RF output power of 1.5 dBm. The circuits are fabricated in a production-near SiGe:C bipolar technology. The SiGe:C bipolar transistors show a maximum transit frequency f_T = 200 GHz and a maximum frequency of oscillation _max = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used

Keywords

Ge-Si alloys; bipolar integrated circuits; integrated circuit design; millimetre wave oscillators; voltage-controlled oscillators; 200 GHz; 275 GHz; 67 to 75 GHz; 71.3 to 75.8 GHz; MIM-capacitors; SiGe:C; automotive radar; bipolar technology; bipolar transistors; integrated resistors; mm wave push-push VCO; passive circuitry transmission-line components; power consumption; Automotive engineering; Circuits; Energy consumption; Germanium silicon alloys; Oscillators; Power generation; Radar applications; Radio frequency; Silicon germanium; Time of arrival estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651184

Filename

1651184