Title :
Orbital quantum bit in Si quantum dots
Author :
Ahn, D. ; Hwnag, S.W.
Author_Institution :
Univ. of Seoul, Seoul
Abstract :
In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitals. Evolution of these orbitals is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.
Keywords :
semiconductor quantum dots; silicon; Si; Si - Element; Si quantum dots; anti-symmetric orbitals; multi-valley quantum state transitions; orbital quantum bit; semiconductor quantum dots; Ellipsoids; Information processing; Phonons; Proposals; Quantum computing; Quantum dots; Quantum mechanics; Shape; Silicon; Wave functions; Inter-valley interactions; Obital quantum bits; Si Quantum dots;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388706
