Accurate modeling of RF passive component in deep submicron process

An accurate and effective modeling method suitable for on-chip passive components fabricated in deep submicron process is presented. The proposed model adopts expandable-stage resonators to effectively capture the characteristic behaviors of parasitic interferences which generated owing to component operating at higher frequency and distributed in the component itself and the substrate. As a result, it can model the actual operation characters of component accurately over the interesting frequency range. In order to extract the model efficient, a model extraction procedure with less computational resource cost is also presented. Finally, experiment at a 90 nm-process on-chip spiral inductor verifies the accuracy of proposed modeling method.