DocumentCode :
2211772
Title :
Development of molecular logic array and memory device
Author :
Lee, Hyoyoung ; Bang, Gyeong Sook ; Choi, Nak-Jin ; Lee, Junghyun ; Park, Kang-Ho
Author_Institution :
Convergence Technol. Res. Div., Daejeon
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
150
Lastpage :
151
Abstract :
For the realization of high density logic and memory device in nanotechnology field, many researchers have applied functional organic rectifying molecules for molecular logic gate and switching molecules for molecular memory device by using self-assembled monolayers (SAMs). We have been worked on a development of 3 x 3 molecular AND/OR logic gates. To implement the molecular logic gates, we synthesized rectifying molecules having high rectification ratio and fabricated 3 x 3 array device with 9 nano-pores whose diameter is about 100 nm. Finally, we can successfully implement the AND/OR logic gates. In addition, we have worked on a fabrication of molecular memory device. To implement single organic monolayer device in the vertical structure of metal-molecule-metal electrode, it is required to solve fundamental problems, that is, an electrical short. A yield of the molecular device using self assembled single monolayer, is less than 5 % even in nano-pore device. For the realization of molecular memory device using single monolayer, we introduce new way by using organic conducting electrode. The yield of the newly developed molecular device is 50-60%, which is improved over 10 times. Furthermore, we like to report a device fabrication by using a nano-imprinting lithography technique.
Keywords :
integrated memory circuits; logic arrays; logic gates; molecular electronics; monolayers; nanolithography; self-assembly; functional organic rectifying molecules; high density logic device; metal-molecule-metal electrode; molecular logic array; molecular logic gates; molecular memory device; nano-imprinting lithography; nanotechnology; organic conducting electrode; organic monolayer device; rectification ratio; self-assembled monolayers; switching molecules; Electrodes; Fabrication; Logic arrays; Logic devices; Logic gates; Magnetic confinement; Nanoscale devices; Nanotechnology; Self-assembly; Voltage; Molecular electronic; assembled monolayer; logic gate; memory; nanoimprint; nanopore; self;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388723
Filename :
4388723
Link To Document :
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