DocumentCode
2211973
Title
Thickness dependent properties of nanocryastalline Sb2 S3 electrode
Author
Patil, Vaishali ; Patil, Arun ; Choi, Ji-Won ; Jin, Yoon Seok
Author_Institution
Korea Inst. of Sci. & Technol., Seoul
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
172
Lastpage
173
Abstract
Sb2S3 thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was n-Sb2S3 / 0.25 M NaOH-0.25 Na2S -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the Sb2S3 thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.
Keywords
electrochemical electrodes; nanostructured materials; photoelectrochemical cells; photovoltaic effects; FTO coated glass substrates; SEM; XRD; chemical bath deposition method; conduction activation energy; electrical conductivity; nanocrystalline electrode; photoelectrochemical cell configuration; photovoltaic output characteristics; thermoelectric power measurements; thickness dependent properties; thin film electrode; Bismuth; Capacitance; Chemicals; Glass; Grain size; Photovoltaic systems; Solar power generation; Sputtering; Substrates; Transistors; PEC; Thickness; Thin Film Electrode;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388732
Filename
4388732
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