Title :
Measurement and modelling of the emitter resistance of polysilicon emitter transistors
Author :
Wolstenholme, G R ; Ashburn, P. ; Jorgensen, N. ; Gold, D. ; Booker, G.R.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
A method for measuring the emitter resistance of polysilicon emitter transistors is described that separates the interface and metal/polysilicon contact components of the emitter resistance. Results show that for devices with a continuous interfacial layer the interface resistance controls the emitter resistance and is between 200 and 450 Ωμm2. This resistance is found to be current dependent and good agreement between theory and experiment is obtained. Results for devices with a discontinuous interfacial layer indicate that low interface resistances (17-33 Ωμm2) suitable for VLSI applications can be obtained by deliberately breaking up the interfacial layer. In this case the metal contact resistance contributes significantly to the total emitter resistance
Keywords :
bipolar transistors; contact resistance; electric resistance measurement; elemental semiconductors; semiconductor device models; silicon; Si; continuous interfacial layer; discontinuous interfacial layer; emitter resistance; interface resistance; metal contact resistance; modelling; polysilicon emitter transistors; resistance measurement; Computer science; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Equations; Gold; Inorganic materials; Transistors; Very large scale integration;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51044
