DocumentCode :
2212064
Title :
An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications
Author :
Viallon, Christophe ; Tournier, Eric ; Graffeuil, Jacques ; Parra, Thierry
Author_Institution :
LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex 4, France; Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France
fYear :
2003
fDate :
Oct. 2003
Firstpage :
1
Lastpage :
4
Abstract :
This paper deals with an original design of an active power splitter featuring a differential output presenting a greatly enhanced even mode rejection. The proposed circuit consists in two cascaded common emitter and common collector differential pairs. For achieving the best performance, it is shown that each of these two differential pairs requires a specific common node to ground impedance that is discussed. The circuit has been implemented on a 0.25¿m SiGe BiCMOS process and exhibits anticipated phase and amplitude broadband unbalance less than 6.5° and 0.6 dB respectively all over the 6-27 GHz frequency range. At 20 GHz, a common mode rejection ratio better than 43 dB is predicted, i.e. a maximum 0.12 dB/0.35° output signal unbalance.
Keywords :
BiCMOS integrated circuits; Costs; Differential amplifiers; Frequency; Germanium silicon alloys; Impedance matching; Microwave circuits; Power generation; Silicon germanium; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMA.2003.340811
Filename :
4142939
Link To Document :
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