Title :
Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications
Author :
Yuasa, Shinji ; Matsumoto, Rie ; Fukushima, Akio ; Kubota, Hitoshi ; Nagahama, Taro ; Djayaprawira, David D. ; Tsunekawa, Koji ; Maehara, Hiroki ; Nagamine, Yoshinori ; Nagai, Motonobu ; Yamagata, Shinji ; Suzuki, Yoshishige ; Mizuguchi, Masaki ; Deac, Al
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.
Keywords :
boron alloys; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnesium compounds; magnetic epitaxial layers; magnetic multilayers; magnetic sensors; magnetic tunnelling; metallic epitaxial layers; CoFeB-MgO-CoFeB - Interface; FeCo-MgO-FeCo - Interface; epitaxial layers; giant tunneling magnetoresistance; magnetic sensor; magnetic tunnel junctions; next-generation spintronic devices; temperature 293 K to 298 K; Amorphous materials; Crystallization; Electrodes; Giant magnetoresistance; Iron; Magnetic sensors; Magnetic tunneling; Magnetoelectronics; Temperature sensors; Tunneling magnetoresistance; MgO; magnetic tunnel junction; magnetoresistance; spintronics; tunneling;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388737
