• DocumentCode
    2212088
  • Title

    An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications

  • Author

    Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh

  • Author_Institution
    Centre for Integrated Circuits & Systems, Nanyang Technological University, Singapore 639798
  • fYear
    2003
  • fDate
    Oct. 2003
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands ¿ 2.35GHz-2.6GHz and 5GHz-6GHz, is presented in this paper. The proposed dual-band LNA can be used for the Bluetooth, HiperLAN and Wireless LAN (IEEE 802.11a) communication applications, and is designed based on IBM 0.25¿m SiGe BiCMOS technology, which has better performance comparing with silicon technology, while lower cost and better integration feasibility comparing with GaAs technology.
  • Keywords
    BiCMOS integrated circuits; Bluetooth; Costs; Dual band; Frequency; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; Silicon germanium; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.340812
  • Filename
    4142940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2212088