Title :
An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications
Author :
Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh
Author_Institution :
Centre for Integrated Circuits & Systems, Nanyang Technological University, Singapore 639798
Abstract :
A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands ¿ 2.35GHz-2.6GHz and 5GHz-6GHz, is presented in this paper. The proposed dual-band LNA can be used for the Bluetooth, HiperLAN and Wireless LAN (IEEE 802.11a) communication applications, and is designed based on IBM 0.25¿m SiGe BiCMOS technology, which has better performance comparing with silicon technology, while lower cost and better integration feasibility comparing with GaAs technology.
Keywords :
BiCMOS integrated circuits; Bluetooth; Costs; Dual band; Frequency; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; Silicon germanium; Wireless LAN;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340812
