DocumentCode :
2212102
Title :
Particle flux and energy distributions in electron beam-produced ion-ion plasmas
Author :
Walton, S.G. ; Leonhardt, Darin ; Fernsler, R.F. ; Meger, R.A.
Author_Institution :
Div. of Plasma Phys., Naval Res. Lab., Washington, DC, USA
fYear :
2002
fDate :
26-30 May 2002
Firstpage :
279
Abstract :
Summary form only given. Ion-ion plasmas are thought to prevent device damage and isotropic etch profiles resulting from localized surface charging in conventional electron-ion plasma processing. The advantage of ion-ion plasmas is derived from the ability to deliver anisotropic fluxes of both positive and negative ions to the substrate surface. We present the results of experiments aimed at forming electron beam-generated ion-ion plasmas. Temporally resolved ion flux and energy distributions are reported for pulsed plasmas produced in Ar/SF/sub 6/ mixtures. Positive and negative ions were extracted from the plasma by applying a low frequency, low voltage, square wave bias to an electrode located adjacent to the plasma. Supporting Langmuir probe and microwave absorption measurements are also reported to give a more complete description of the ion-ion character in these plasmas. The results are compared to those from electron-ion plasmas produced by the same high-energy electron beam in non-halogen gases. The appropriate gas phase kinetics are discussed as well as the experimental requirements needed to produce ion-ion plasmas.
Keywords :
Langmuir probes; argon; electron beams; negative ions; plasma collision processes; plasma diagnostics; plasma production; plasma-beam interactions; positive ions; sulphur compounds; Ar-SF/sub 6/; Ar/SF/sub 6/ mixtures; anisotropic fluxes; electron beam produced ion-ion plasmas; electron beam-generated ion-ion plasmas; electron-ion plasma processing; energy distributions; etch profiles; ion-ion plasmas; localized surface charging; negative ions; particle flux; positive ions; pulsed plasmas; substrate surface; temporally resolved ion flux; Anisotropic magnetoresistance; Electron beams; Energy resolution; Etching; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma waves; Surface charging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
Type :
conf
DOI :
10.1109/PLASMA.2002.1030575
Filename :
1030575
Link To Document :
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