• DocumentCode
    2212163
  • Title

    Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs

  • Author

    Long, Sabine ; Escotte, Laurent ; Graffeuil, Jacques ; Fellon, Philippe ; Roques, Daniel

  • Author_Institution
    LAAS CNRS et Université Paul Sabatier, 7 Av. du Colonel Roche, 31077 Toulouse cedex 4, France
  • fYear
    2003
  • fDate
    Oct. 2003
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    The design of a coplanar low-noise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 - 31 GHz frequency band with a 20 dB power gain.
  • Keywords
    Circuit noise; Circuit synthesis; Frequency; Geometry; Intrusion detection; Low-noise amplifiers; Noise figure; PHEMTs; Semiconductor device noise; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.340815
  • Filename
    4142943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2212163