Title :
Growth of nickel silicide nanowires by chemical vapor deposition
Author :
Jin, Chang-Beom ; Kim, Cheol-Joo ; Jo, Moon-Ho
Author_Institution :
Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
Abstract :
We report the growth process of Ni-silicide nanowires by chemical vapor deposition using SiH4 as a precursor. We have found systematic variation of shapes and compositions of Ni-silicide nanostructures from thin films to nanowires with growth variables such as growth temperature and SiH4 partial pressure. Based upon one-dimensional Ni diffusion model, we discuss the growth mechanism of Ni-silicide nanowire.
Keywords :
chemical vapour deposition; nanotechnology; nanowires; nickel alloys; silicon alloys; NiSi; NiSi - Binary; chemical vapor deposition; nickel silicide nanowires growth; thin films; Chemical vapor deposition; Crystallization; Nanostructures; Nanowires; Nickel; Scanning electron microscopy; Silicides; Temperature; Transistors; Transmission electron microscopy; Chemical vapor deposition; Nanowire; Nickel; Silicide;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388742
