DocumentCode
2212223
Title
Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques
Author
Wang, Guoan ; Bacon, Andrew ; Abdolvand, Reza ; Ayazi, Farrokh ; Papapolymerou, John ; Tentzeris, Emmanouil M.
Author_Institution
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA
fYear
2003
fDate
Oct. 2003
Firstpage
25
Lastpage
27
Abstract
Finite Ground Coplanar (FGC) waveguide transmission lines on CMOS grade silicon wafer (¿<0.01 ohm-cm) with a thick embedded silicon oxide layer have been developed using micromachining techniques. Lines with different lengths were designed, fabricated and measured. Measured attenuation and s-parameters are presented in the paper. Results show that the attenuation loss of the fabricated FGC lines is as low as 3.2 dB/cm at 40 GHz.
Keywords
Attenuation; Circuits; Coplanar transmission lines; Coplanar waveguides; Costs; Dielectric substrates; Electromagnetic waveguides; Micromachining; Polyimides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340817
Filename
4142945
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