Title :
A new non-quasi-static small signal model of SOI FinFETs
Author :
Kang, In Man ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
A new non-quasi-static small-signal model of FinFETs is presented using 3-D device simulator. The analytical parameter extractions are performed by K-parameter analysis. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling RMS error of Y-parameter up to 700 GHz was calculated to be only 1.6% in the saturation region.
Keywords :
MOSFET; silicon-on-insulator; 3D device simulator; SOI FinFET; Y-parameter analysis; nonquasi-static small signal model; parameter extractions; Capacitance; Circuit simulation; Data mining; Equations; Equivalent circuits; FinFETs; Frequency; Integrated circuit modeling; Parameter extraction; Performance analysis; FinFET; RF MOSFET modeling; non-quasi-static model;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388744
