Title :
I-V modeling for nanoscale n-MOSFET from liquid-nitrogen temperature to room temperature
Author :
Baek, Rock-Hyun ; Kang, Hee-Sung ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
Abstract :
BSIM4 I-V modeling was performed for n-MOSFET with 70-nn channel length at different temperature conditions. Various devices with different gate lengths (10 mum, 1 mum, 0.5 mum, 100 nm, 90 nm, 70 nm) and widths (10 mum, 0.5 mum, 0.3 mum) were also characterized and simulated, respectively. I-V modeling is executed from subthreshold to strong inversion as well as from linear to saturation regions. This modeling makes it possible to estimate the electrical characteristics of n-MOSFET and to explain the temperature-dependent behaviors of deep-submicron MOSFET devices.
Keywords :
MOSFET; nanotechnology; BSIM4 I-V modeling; deep-submicron MOSFET devices; liquid-nitrogen temperature; nanoscale n-MOSFET; room temperature; Cryogenics; Electric variables; Geometry; MOSFET circuits; Nanoscale devices; Solid modeling; Temperature dependence; Thermal conductivity; Threshold voltage; Transconductance; BSIM4; low temperature; n-MOSFET; nanoscale; scalable model;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388745
