DocumentCode :
2212348
Title :
Quantitative measurement of the degradation of EMI shielding and mating flange materials after environmental exposure
Author :
Lessner, Philip ; Inman, D.
Author_Institution :
Chomerics, Inc., Woburn, MA, USA
fYear :
1993
fDate :
9-13 Aug 1993
Firstpage :
207
Lastpage :
213
Abstract :
A test program that demonstrated that the electrical degradation of a conductive elastomer-aluminum flange joint could be determined using shielding effectiveness measurements is described. Two tests were developed. One measures the degradation of shielding effectiveness of a simulated gasketed enclosure seam (test set). Shielding effectiveness measurements are made at frequencies up to 10 GHz. The second test method yields a quantitative scale of conductive elastomer corrosivity (galvanic compatibility) and a quantitative measure of DC electrical degradation of the conductive elastomer. The tests demonstrated that a Ag-Al gasket/aluminum flange joint was more stable than a nickel-coated graphite gasket/aluminum flange joint after 192 h of sulfur dioxide salt fog exposure. This result reflects the greater stability of the Ag-Al gasket and the better galvanic compatibility of the Ag-Al gasket with the aluminum flange
Keywords :
conducting materials; elastomers; electromagnetic interference; electromagnetic shielding; environmental factors; materials testing; 10 GHz; 192 hr; Ag-Al; Al; DC electrical degradation; EMC; EMI shielding; Ni; SHF; conductive elastomer corrosivity; conductive elastomer-aluminum flange joint; electrical degradation; environmental exposure; galvanic compatibility; mating flange materials; quantitative measurement; shielding effectiveness measurements; simulated gasketed enclosure seam; sulfur dioxide salt fog exposure; test program; test set; Aluminum; Conductivity measurement; Degradation; Electric variables measurement; Electromagnetic interference; Flanges; Frequency measurement; Galvanizing; Gaskets; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 1993. Symposium Record., 1993 IEEE International Symposium on
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-1304-6
Type :
conf
DOI :
10.1109/ISEMC.1993.473746
Filename :
473746
Link To Document :
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