Title :
Refined Wide Band Modelling and Design of CMOS-Compatible Spiral Inductors with BCB Dielectric Layer
Author :
Tikhov, Yuri ; Shim, Dongha ; Nam, Kuang Woo ; Song, Insang
Author_Institution :
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea. phone: +82-31-280-9469, fax: +82-31-280-9473, e-mail: tikhov@sait.samsung.co.kr
Abstract :
This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective function. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.
Keywords :
Capacitance; Dielectric substrates; Equivalent circuits; Fabrication; Frequency; Inductors; Integrated circuit modeling; Silicon; Spirals; Wideband;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340825
