DocumentCode
2212390
Title
Nano-scale phase separation in As2 S3 film and its effect on scattering loss in plasma etched waveguides
Author
Choi, Duk Yong ; Madden, Steve ; Rode, Andrei ; Wang, Rongping ; Ankiewicz, Adrian ; Luther-Davies, Barry
Author_Institution
Australian Nat. Univ., Canberra
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
326
Lastpage
327
Abstract
We present evidence for nano-scale phase separation of As2S3 films prepared by ultra-fast pulsed laser deposition and its effect on line edge roughness in plasma etched waveguides. By changing the plasma chemistry from CF4-O2 to CHF3-O2, we demonstrate a two times reduction in roughness.
Keywords
arsenic compounds; phase separation; plasma chemistry; plasma filled waveguides; pulsed laser deposition; sputter etching; line edge roughness; nanoscale phase separation; plasma chemistry; plasma etched waveguides; scattering loss; ultrafast pulsed laser deposition; Atom optics; Bonding; Optical devices; Optical films; Optical losses; Optical scattering; Optical waveguides; Plasma applications; Plasma chemistry; Sputter etching; arsenic tri-sulphide (As2 S3 ); line edge roughness; nano-scale phase separation; plasma etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388750
Filename
4388750
Link To Document