Title :
1.55 μm InAs quantum dot DFB lasers
Author :
Kim, Jin Soo ; Kwack, Ho-Sang ; Choi, Byung Seok ; Sim, Eundeuk ; Lee, Chul Wook ; Oh, Dae Kon ; Lee, Cheul-Ro
Author_Institution :
IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 mum were fabricated. Single-mode lasing operation around the wavelength of 1.56 mum was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70degC, which is the first observation on the single-mode lasing around 1.55 mum. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45degC and 74.2 K up to 70degC, respectively.
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor epitaxial layers; DFB lasers; InAs; InAs - Interface; InP-InGaAs; InP-InGaAs - Interface; continuous wave modes; distributed feedback lasers; grating structures; molecular beam epitaxy; pulsed modes; quantum dot lasers; ridge waveguide lasers; room temperature; single mode lasing; size 3 mum; temperature dependence; threshold current density; wavelength 1.55 mum; Distributed feedback devices; Gratings; Indium gallium arsenide; Indium phosphide; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical device fabrication; Quantum dot lasers; Temperature dependence; 1.55μm; characteirstic temperature; laser; quantum dot; single-mode operation;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388753
