Title :
Measurement of thermoelectric properties of individual bismuth telluride nanowires
Author :
Zhou, Jianhua ; Jin, Chuangui ; Seol, Jae Hun ; Li, Xiaoguang ; Shi, Li
Author_Institution :
Dept. of Mech. Eng., Texas Univ., Austin, TX, USA
Abstract :
We have measured the thermoelectric properties of electrochemically deposited bismuth telluride (BixTe1-x) nanowires with different atomic ratio or x. In this paper, we report the measurement method and the results for an individual nanowire from a batch with x found to be about 0.54. The Seebeck coefficient of the nanowire was found to be -30 μV/K at temperature 300 K. The obtained electrical conductivity of the nanowire showed unusually weak temperature dependence, and the value at 300 K was only 5.6% lower than that of bulk Bi0.485Te0.515 crystal. The thermal conductivity of the nanowires was found to be 44% lower than that of bulk Bi0.485Te0.515 crystals.
Keywords :
Seebeck effect; bismuth compounds; electrical conductivity; nanowires; 300 K; BixTe1-x; Seebeck coefficient; atomic ratio; bismuth telluride nanowires; electrical conductivity; electrochemically deposited; thermal conductivity; thermoelectric properties; weak temperature dependence; Active appearance model; Atomic layer deposition; Atomic measurements; Bismuth; Materials science and technology; Nanostructured materials; Nanowires; Tellurium; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
Print_ISBN :
0-7803-9552-2
DOI :
10.1109/ICT.2005.1519876