Measurement of thermoelectric properties of individual bismuth telluride nanowires

Author

Zhou, Jianhua ; Jin, Chuangui ; Seol, Jae Hun ; Li, Xiaoguang ; Shi, Li

Author_Institution

Dept. of Mech. Eng., Texas Univ., Austin, TX, USA

fYear

2005

fDate

19-23 June 2005

Firstpage

17

Lastpage

20

Abstract

We have measured the thermoelectric properties of electrochemically deposited bismuth telluride (Bi_xTe_1-x) nanowires with different atomic ratio or x. In this paper, we report the measurement method and the results for an individual nanowire from a batch with x found to be about 0.54. The Seebeck coefficient of the nanowire was found to be -30 μV/K at temperature 300 K. The obtained electrical conductivity of the nanowire showed unusually weak temperature dependence, and the value at 300 K was only 5.6% lower than that of bulk Bi_0.485Te_0.515 crystal. The thermal conductivity of the nanowires was found to be 44% lower than that of bulk Bi_0.485Te_0.515 crystals.

Keywords

Seebeck effect; bismuth compounds; electrical conductivity; nanowires; 300 K; Bi_xTe_1-x; Seebeck coefficient; atomic ratio; bismuth telluride nanowires; electrical conductivity; electrochemically deposited; thermal conductivity; thermoelectric properties; weak temperature dependence; Active appearance model; Atomic layer deposition; Atomic measurements; Bismuth; Materials science and technology; Nanostructured materials; Nanowires; Tellurium; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2005. ICT 2005. 24th International Conference on

ISSN

1094-2734

Print_ISBN

0-7803-9552-2

Type

conf

DOI

10.1109/ICT.2005.1519876

Filename

1519876