Production and application of low-energy, high-current electron beams

Author

Proskurovsky, D.I. ; Ozur, G.E. ; Rotshtein, V.P.

Author_Institution

Inst. of High-Current Electron., Tomsk, Russia

fYear

2000

fDate

4-7 June 2000

Firstpage

285

Abstract

Summary form only given. In the paper, recent investigations result in the field of formation and transportation of low-energy, high current electron beams (LEHCEBs) in plasma-filled systems is summarized, electron beam installation development is described, study results of surface layer modification of materials irradiated by LEHCEBs is given, examples of electron beam treatment application for improving the performance of materials and articles are presented. The installations developed have the following parameters: the electron energy 10-40 keV; the pulse duration 0.5-5 /spl mu/S; the energy density 0.5-40 J/cm/sup 2/, and the beam cross-section area 10-50 cm/sup 2/. They are simple, reliable in operation, and radiation safe.

Keywords

electron beam effects; electron beams; electron sources; plasma devices; plasma materials processing; 0.5 to 5 mus; 10 to 40 keV; beam cross-section area; electron beam installation development; electron beam treatment; electron energy; low-energy high-current electron beams; materials irradiation; plasma-filled systems; pulse duration; surface layer modification; Copper; Electrodes; Electron beams; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature; Production; Sulfur hexafluoride;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on

Conference_Location

New Orleans, LA, USA

ISSN

0730-9244

Print_ISBN

0-7803-5982-8

Type

conf

DOI

10.1109/PLASMA.2000.855169

Filename

855169