DocumentCode :
2212612
Title :
Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm
Author :
Kian-Giap Gan ; Jin-Wei Shi ; Yi -Jen Chiu ; Chi-Kuang Sun ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
2002
fDate :
7-9 Jan. 2002
Firstpage :
153
Lastpage :
155
Abstract :
Traveling wave photodetectors (TWPD) are promising devices for high bandwidth and high efficiency. In this paper, electro-optic sampling measurements of this novel self-aligned metal-semiconductor-metal TWPD under different biases and pumping levels are performed at a wavelength of 810 nm and the electrical sampling measurements are performed at a wavelength of 1230 nm.
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; metal-semiconductor-metal structures; microwave photonics; optical fibre communication; optical pumping; optical receivers; photodetectors; signal sampling; 1230 nm; 810 nm; GaAs; TWPD; TWPD biases; TWPD pumping levels; bandwidth; efficiency; electrical sampling measurements; electro-optic sampling measurements; fiber optic links; low-temperature-grown GaAs traveling wave photodetector; sampling wavelength; self-aligned MSM GaAs traveling wave photodetector; self-aligned metal-semiconductor-metal TWPD; traveling wave photodetectors; Bandwidth; Coplanar waveguides; Electric variables measurement; Electrooptical waveguides; Gallium arsenide; Oscilloscopes; Photodetectors; Sampling methods; Voltage; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics, 2001. MWP '01. 2001 International Topical Meeting on
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
0-7803-7003-1
Type :
conf
DOI :
10.1109/MWP.2002.981819
Filename :
981819
Link To Document :
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