Plasma assisted deposition technique for synthesis of low dielectric constant polyanisidine thin films

Summary form only given. We report the preparation of low dielectric polyanisidine thin films by employing ac plasma polymerization technique. FTIR studies revealed that the aromatic ring is retained in the polymer films. This will enhance the thermal stability of the films. Dielectric permittivity and dielectric loss of these films were measured by a HP4192A impedance analyzer in the frequency range of 100 Hz to 1 MHz. These films sandwich between two metal electrodes were subjected to dielectric studies in a home built conductivity cell in the temperature range of 300 K to 343 K. Dielectric constant of these films lie in the range of 2.22 to 2.37 for the entire temperature and frequency range scanned. Initial studies indicate that these materials are potential candidates where low dielectric constant is one of the criterion.