DocumentCode :
2212784
Title :
High-Q Differential Inductors for RFIC Design
Author :
Reiha, Michael T. ; Choi, Tae-Young ; Jeon, Jong-Hyeok ; Mohammadi, Saeed ; Katehi, Linda P B
Author_Institution :
Radiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 49109-2122, USA.
fYear :
2003
fDate :
Oct. 2003
Firstpage :
127
Lastpage :
130
Abstract :
The demand for high-Q on-chip monolithic inductors is driven by the motivation to enhance high-frequnecy circuits for wireless applications. Differential inductors can be implemented in order to improve the quality factor (Q) of differential circuits, while demanding less on-chip area. In this paper, we introduce two differential inductors of 6-nH, fabricated in a low-cost post-process. The process uses a low-k dielectric layer (SU-8¿) prepared on a highly resistive silicon-on-insulator (SOI) wafer. The inductors have modest metal thicknesses of 1.5um and 3.6um and achieve differential Q values of 14.7 at 5.9GHz and 22.7 at 4.0GHz, respectively, for an inductance value of 6.0nH.
Keywords :
Conductivity; Dielectric substrates; Fabrication; Frequency; Gold; Inductors; Low-noise amplifiers; Operational amplifiers; Radiofrequency amplifiers; Radiofrequency integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMA.2003.340906
Filename :
4142970
Link To Document :
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