DocumentCode
2212784
Title
High-Q Differential Inductors for RFIC Design
Author
Reiha, Michael T. ; Choi, Tae-Young ; Jeon, Jong-Hyeok ; Mohammadi, Saeed ; Katehi, Linda P B
Author_Institution
Radiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 49109-2122, USA.
fYear
2003
fDate
Oct. 2003
Firstpage
127
Lastpage
130
Abstract
The demand for high-Q on-chip monolithic inductors is driven by the motivation to enhance high-frequnecy circuits for wireless applications. Differential inductors can be implemented in order to improve the quality factor (Q) of differential circuits, while demanding less on-chip area. In this paper, we introduce two differential inductors of 6-nH, fabricated in a low-cost post-process. The process uses a low-k dielectric layer (SU-8¿) prepared on a highly resistive silicon-on-insulator (SOI) wafer. The inductors have modest metal thicknesses of 1.5um and 3.6um and achieve differential Q values of 14.7 at 5.9GHz and 22.7 at 4.0GHz, respectively, for an inductance value of 6.0nH.
Keywords
Conductivity; Dielectric substrates; Fabrication; Frequency; Gold; Inductors; Low-noise amplifiers; Operational amplifiers; Radiofrequency amplifiers; Radiofrequency integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340906
Filename
4142970
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