Temperature dependent electrical properties of OLEDs using Zn complex

Author

Kwon, Oh-Kwan ; Kim, Dong-Eun ; Kim, Won-Sam ; Lee, Burm-Jong ; Kwon, Young-Soo

Author_Institution

Dept. of Electr. Eng., Dong-A Univ., Busan

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

366

Lastpage

367

Abstract

We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q. Temperature dependent of electrical properties of OLEDs using Zn(phen)q are studied to understand an electrical conduction mechanism. The current density-voltage characteristics are measured in the temperature range of 60 ~ 240 K, and analyzed them using a hopping model with exponential trap distribution. At temperature above 150 K, the hopping conduction with exponential trap distribution is dominant. And we have obtained a characteristic trap depth of E_t = 0.12 eV.

Keywords

electroluminescence; hopping conduction; organic light emitting diodes; zinc; OLED; current density-voltage characteristics; electrical conduction mechanism; electroluminescence materials; exponential trap distribution; hopping conduction; organic light emitting diode; temperature dependent electrical property; zinc; Conducting materials; Current measurement; Density measurement; Electroluminescence; Mechanical factors; Organic light emitting diodes; Temperature dependence; Temperature distribution; Temperature measurement; Zinc; characteristic; exponential trap distribution; hopping; trap depth;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388769

Filename

4388769