Title :
High efficiency segmented bulk devices cascaded with high-performance superlattice cold-stage
Author :
Siivola, Edward ; Thomas, Peter ; Coonley, Kip ; Reddy, Anil ; Posthill, John ; Cook, Bruce ; Venkatasubramanian, Rama
Author_Institution :
Nextreme Thermal Solutions, Research Triangle Park, NC, USA
Abstract :
Segmented bulk single-couple devices have been fabricated using SiGe, PbTe, and TAGS materials. Initial optimization studies have yielded power generation efficiencies in excess of 12%, with cold-side temperatures of ∼175°C and hot-side temperatures of ∼700°C. The goal is to cascade these devices with high-performance Bi2Te3-superlattice cold-stage operating between 25°C to 175°C. We will be discussing the trade space between segmented and cascaded assemblies as it relates to the thermal and electrical matching between the different layers and device complexity. It will be shown how layer matching affects overall device performance and how this knowledge can be used to determine the optimal design. We will also discuss the methodologies used to meet the various challenges of high temperature materials assembly including ohmic contacts, diffusion barriers, and CTE induced stresses. Measurement results of device performance will be provided to illustrate the consequences of the methodologies used. We will also include results from early integration of these 2-stage segmented devices to thin-film superlattice cold-stage device to yield three stage power devices.
Keywords :
Ge-Si alloys; IV-VI semiconductors; bismuth compounds; diffusion barriers; lead compounds; ohmic contacts; optimisation; power semiconductor devices; thermoelectric conversion; thermoelectric devices; thermoelectric power; 2-stage segmented devices; 25 to 175 degC; Bi2Te3; CTE induced stresses; PbTe; SiGe; TAGS materials; cascaded assemblies; cold-side temperatures; device complexity; device performance; diffusion barriers; electrical matching; high efficiency segmented bulk devices; high temperature materials assembly; high-performance superlattice cold-stage; hot-side temperatures; layer matching; ohmic contacts; optimal design; optimization; power generation efficiencies; segmented assemblies; single-couple devices; thermal matching; three stage power devices; Assembly; Bismuth; Germanium silicon alloys; Ohmic contacts; Power generation; Silicon germanium; Superlattices; Technical Activities Guide -TAG; Tellurium; Temperature;
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
Print_ISBN :
0-7803-9552-2
DOI :
10.1109/ICT.2005.1519888