High performance GOI MISFET with nickel germanide source/ drain using new graded Ge condensation method

Author

Park, Mungi ; Choi, Won Seok ; Hong, Byungyou

Author_Institution

LG. Philips LCD, Gumi

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

376

Lastpage

377

Abstract

We demonstrated for the first time a small size GOI (Germanium-on-insulator) MISFET with nickel germanide source/drain, thin high-k dielectric and metal gate electrode which is fabricated by a new graded Ge condensation method. We obtained two times higher electron mobility in GOI MISFET fabricated by this new graded Ge condensation method when compared with that in SOI MISFET. In addition, a very low leakage current of less than 1 nA and a very high on-current of 549 muA/mum at V_d=V_g=1.2 V were simultaneously obtained in a small size GOI MISFET with the gate length of 0.65 mum.

Keywords

MISFET; condensation; electron mobility; germanium; high-k dielectric thin films; semiconductor-insulator boundaries; GOI MISFET; Ge; Ge - Element; condensation; electron mobility; germanium-on-insulator; high-k dielectric; metal gate electrode; silicon-on-insulator; size 0.65 mum; voltage 1.2 V; Electrodes; Electron mobility; Hafnium oxide; High-K gate dielectrics; Leakage current; MISFETs; Magnetic materials; Nickel; Rough surfaces; Surface roughness; GOI; High-k; Metal Gate; Nickel-germanide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388774

Filename

4388774