• DocumentCode
    2212931
  • Title

    Timing extraction using direct optical injection locking of a relaxation oscillator based on an InP/InGaP/InGaAs resonant tunnel diode

  • Author

    Kahn, M. ; Lasri, J. ; Eisenstein, G. ; Ritter, D. ; Orenstein, M.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • fYear
    2002
  • fDate
    7-9 Jan. 2002
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    Direct optical injection locking of an InP/InGaP/InGaAs Resonant Tunnel Diode relaxation oscillator was used for error free timing extraction in a 2.5 Gbit/s optoelectronic receiver.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; injection locked oscillators; microwave photonics; optical receivers; relaxation oscillators; resonant tunnelling diodes; timing; tunnel diode oscillators; 2.5 Gbit/s; InP-InGaP-InGaAs; InP/InGaP/InGaAs resonant tunnel diode; direct optical injection locking; optoelectronic receiver; relaxation oscillator; timing extraction; Circuits; Diodes; Frequency; Indium phosphide; Injection-locked oscillators; Optical modulation; Optical pulse generation; Optical receivers; Resonant tunneling devices; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Photonics, 2001. MWP '01. 2001 International Topical Meeting on
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    0-7803-7003-1
  • Type

    conf

  • DOI
    10.1109/MWP.2002.981832
  • Filename
    981832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2212931