Title :
Timing extraction using direct optical injection locking of a relaxation oscillator based on an InP/InGaP/InGaAs resonant tunnel diode
Author :
Kahn, M. ; Lasri, J. ; Eisenstein, G. ; Ritter, D. ; Orenstein, M.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Direct optical injection locking of an InP/InGaP/InGaAs Resonant Tunnel Diode relaxation oscillator was used for error free timing extraction in a 2.5 Gbit/s optoelectronic receiver.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; injection locked oscillators; microwave photonics; optical receivers; relaxation oscillators; resonant tunnelling diodes; timing; tunnel diode oscillators; 2.5 Gbit/s; InP-InGaP-InGaAs; InP/InGaP/InGaAs resonant tunnel diode; direct optical injection locking; optoelectronic receiver; relaxation oscillator; timing extraction; Circuits; Diodes; Frequency; Indium phosphide; Injection-locked oscillators; Optical modulation; Optical pulse generation; Optical receivers; Resonant tunneling devices; Timing;
Conference_Titel :
Microwave Photonics, 2001. MWP '01. 2001 International Topical Meeting on
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
0-7803-7003-1
DOI :
10.1109/MWP.2002.981832
