• DocumentCode
    2213054
  • Title

    Thermal stability of perpendicular exchange bias in [Pd/Ferromagnet]N/FeMn films

  • Author

    Joo, H.W. ; Heo, J. ; Choi, H.C. ; Kim, M.S. ; Choi, S.D. ; You, C.-Y. ; Lee, K.A. ; Lee, S.S. ; Hwang, D.G.

  • Author_Institution
    Univ. of Inha, Incheon
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    386
  • Lastpage
    387
  • Abstract
    The dependencies of the annealing temperature and the stack number ,N on perpendicular exchange-biasing(Hex) and coercivity(Hc) in |Pd/Co|N and |Pd/Co (or CoFe)lN/FeMn multilayers were investigated. The surface anisotropy was varied as a function of N with constant bulk anisotropy. It was found that Hex does not depend on the surface anisotropy, while Hc shows a strong dependence. Therefore, it is possible to tailor wide ranges of the Hc (300 ~ 600 Oe) without varying Hex(250 ~ 300 Oe) through the single control parameter stack number N. After annealing the Hc shows peak value at 350degC in |Pd/Co] multilayers without FeMn, but the peak temperature is down to 250degC for the exchange biased |Pd/F]N/FeMn samples.
  • Keywords
    cobalt alloys; coercive force; ferromagnetic materials; iron alloys; magnetic annealing; magnetic multilayers; magnetic thin films; palladium alloys; perpendicular magnetic anisotropy; thermal stability; CoFe; CoFe - Interface; FeMn; FeMn - Interface; Pd-Co; Pd-Co - Interface; Pd/Co multilayers; [Pd/ferromagnet]N/FeMn films; annealing temperature; coercivity; magnetic multilayers; perpendicular exchange bias; surface anisotropy; temperature 350 C; thermal stability; Anisotropic magnetoresistance; Annealing; Coercive force; Magnetic anisotropy; Magnetic multilayers; Perpendicular magnetic recording; Physics; Saturation magnetization; Temperature dependence; Thermal stability; Pd/Co multilayer; coercivity; exchange bias; perpendicular magnetic anisotropy; temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388779
  • Filename
    4388779