An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling

Author

Di Cioccio, Léa ; Gueguen, Pierric ; Taibi, Rachid ; Signamarcheix, Thomas ; Bally, Laurent ; Vandroux, Laurent ; Zussy, Marc ; Verrun, Sophie ; Dechamp, Jérôme ; Leduc, Patrick ; Assous, Myriam ; Bouchu, David ; De Crecy, François ; Chapelon, Laurent-Luc

Author_Institution

CEA/Leti- Minatec, Grenoble, France

fYear

2009

fDate

28-30 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low stress high deposition rate oxide is deposited to embed the dices. A final thinning is then done to recover a flat and smooth surface before the trough silicon vias.

Keywords

copper; microassembling; wafer bonding; wafer level packaging; wafer-scale integration; copper direct wafer bonding; die-to wafer 3D integration scheme; oxide/copper layers; planarised oxide inter-die filling; system on chip technologies; Copper; Filling; Optical microscopy; Planarization; Silicon; Stacking; Stress; Temperature; Through-silicon vias; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

3D System Integration, 2009. 3DIC 2009. IEEE International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-4511-0

Electronic_ISBN

978-1-4244-4512-7

Type

conf

DOI

10.1109/3DIC.2009.5306534

Filename

5306534