Title :
Magnetic and electronic properties of Mn delta-doped (Ga0.995Mn0.005)N thin films
Author :
Jeon, H.C. ; Kang, T.W. ; Kim, T.W. ; Kang, Joongoo ; Chang, K.J.
Author_Institution :
Dept. of Phys., Dongguk Univ., Seoul
Abstract :
The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.
Keywords :
Hall effect; SQUIDs; magnetic thin films; magnetisation; manganese; molecular beam epitaxial growth; semimagnetic semiconductors; Curie temperature; delta doping; electronic properties; magnetic properties; magnetization curve; thin films; Buffer layers; Gallium nitride; Magnetic fields; Magnetic films; Magnetic materials; Magnetic properties; Magnetization; Semiconductor thin films; Temperature; Transistors; (Ga0.995Mn0.005)N thin film; Mn delta-doping; high Curie temperature;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388786
