Title :
Reliability aspects of 3D-oriented heterogeneous device design related to stress sensitivity of MOS transistors
Author :
Janczyk, G. ; Bieniek, T. ; Szynka, J. ; Grabiec, P.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
Vertical device integration faces the designers with new thermo-mechanical design and device exploitation problems. Temperature dependent mechanical stress spreading across the device affects its performance. This paper discusses selected performance and reliability issues related device the mechanical stress influence. Sample device optimization recipes on how to avoid performance and reliability degradation are also given.
Keywords :
MOS integrated circuits; integrated circuit reliability; monolithic integrated circuits; optimisation; 3D-oriented heterogeneous device design; MOS transistors; device integration; device optimization; reliability; stress sensitivity; MOSFETs; Stress;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306538
