DocumentCode
2213287
Title
Reliability aspects of 3D-oriented heterogeneous device design related to stress sensitivity of MOS transistors
Author
Janczyk, G. ; Bieniek, T. ; Szynka, J. ; Grabiec, P.
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
fYear
2009
fDate
28-30 Sept. 2009
Firstpage
1
Lastpage
6
Abstract
Vertical device integration faces the designers with new thermo-mechanical design and device exploitation problems. Temperature dependent mechanical stress spreading across the device affects its performance. This paper discusses selected performance and reliability issues related device the mechanical stress influence. Sample device optimization recipes on how to avoid performance and reliability degradation are also given.
Keywords
MOS integrated circuits; integrated circuit reliability; monolithic integrated circuits; optimisation; 3D-oriented heterogeneous device design; MOS transistors; device integration; device optimization; reliability; stress sensitivity; MOSFETs; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-4511-0
Electronic_ISBN
978-1-4244-4512-7
Type
conf
DOI
10.1109/3DIC.2009.5306538
Filename
5306538
Link To Document