Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

Author

Jung, S.I. ; Yeo, H.Y. ; Yeo Yun ; Han, Kwangseok

Author_Institution

Yonsei Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

410

Lastpage

411

Abstract

Near-field scanning optical microscopy (NSOM) studies of road area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of plusmn-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the plusmn-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.

Keywords

optical microscopy; quantum dots; quantum wells; semiconductor lasers; broad area laser diodes; filamentation; linewidth enhancement factor; near-field measurement; near-field scanning optical microscopy; quantum dot; quantum well; Area measurement; Diode lasers; Gallium arsenide; Laser beams; Laser modes; Optical devices; Optical microscopy; Quantum dot lasers; Scanning electron microscopy; Surface emitting lasers; broad area laser diode; near-field scanning optical microscope; quantum dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388791

Filename

4388791