DocumentCode
2213405
Title
Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
Author
Song, Jindong ; Choi, Wonjun ; Lee, Jungil
Author_Institution
Korea Inst. of Sci. & Technol., Seoul
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
414
Lastpage
415
Abstract
InAs quantum dots grown by migration enhanced epitaxy were studied and optimized by the parameter of growth sequence such as the operation of growth interruption, manipulation of conventional epitaxy and migration enhanced epitaxy and so on. The optical and structural properties of the samples were compared among the samples, and advantage of migration enhanced InAs quantum dots over conventional InAs quantum dots were discussed.
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; InAs; InAs - Binary; growth interruption; molecular beam epitaxy; quantum dots; Atom optics; Atomic force microscopy; Atomic layer deposition; Electron optics; Epitaxial growth; Molecular beam epitaxial growth; Optical microscopy; Photoluminescence; Quantum dots; Transmission electron microscopy; Atomic force microscopy; GaAs; InAs; Migration enhanced epitaxy; Photoluminescence; Transmission electronmicroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0540-4
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388793
Filename
4388793
Link To Document