Title :
Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy
Author :
Song, Jindong ; Choi, Wonjun ; Lee, Jungil
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Abstract :
InAs quantum dots grown by migration enhanced epitaxy were studied and optimized by the parameter of growth sequence such as the operation of growth interruption, manipulation of conventional epitaxy and migration enhanced epitaxy and so on. The optical and structural properties of the samples were compared among the samples, and advantage of migration enhanced InAs quantum dots over conventional InAs quantum dots were discussed.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; InAs; InAs - Binary; growth interruption; molecular beam epitaxy; quantum dots; Atom optics; Atomic force microscopy; Atomic layer deposition; Electron optics; Epitaxial growth; Molecular beam epitaxial growth; Optical microscopy; Photoluminescence; Quantum dots; Transmission electron microscopy; Atomic force microscopy; GaAs; InAs; Migration enhanced epitaxy; Photoluminescence; Transmission electronmicroscopy;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388793
