Title :
A Sallen and Key Active Filter Using SiGe BiCMOS Technology
Author :
Temcamani, Farid ; Diab, Hilda ; Régis, Myrianne ; Gautier, Jean-Luc
Author_Institution :
ENSEA-ECIME, 95014 Cergy-Pontoise Cedex, France, Phone: (0033). 1.30.73.62.72
Abstract :
In this paper, a 1.3 GHz Sallen and Key band pass filter, based on a voltage amplifier and designed with an original topology, is presented. This filter realized with a SiGe BiCMOS technology, showed a good agreement between simulation and measurement. In particular, the amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured.
Keywords :
Active filters; Band pass filters; BiCMOS integrated circuits; Germanium silicon alloys; Impedance; Microwave filters; Q factor; Silicon germanium; Topology; Voltage;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340930
