Title :
Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
Author :
Changjoon Yoon ; Kihyun Keem ; Jeongmin Kang ; Dong-Young Jeong ; Moon-Sook Lee ; In-Seok Yeo ; U-In Chung ; Joo-Tae Moon ; Sangsig Kim
Author_Institution :
Korea Univ., Seoul
Abstract :
Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.
Keywords :
field effect transistors; nanowires; photolithography; electrical characteristics; nanowire field effect transistors; photolithographic processes; Boron; Dielectric materials; Electric variables; Electrodes; FETs; Fabrication; Gold; Nanoscale devices; Powders; Voltage; FET; Nanowire; Si; comparison; top-gate;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388798
