Title :
Development of wafer thinning and dicing technology for thin wafer
Author :
Miyazaki, Chuichi ; Shimamoto, Haruo ; Uematsu, Toshihide ; Abe, Yoshiyuki
Author_Institution :
Assoc. of Super-Adv. Electron. Technol. (ASET), Renesas Technol. Corp., Kodaira, Japan
Abstract :
Various stress relief and dicing methods are evaluated for 10 to 30 mum wafer thickness. DP(Dry Polish) and CMG (Chemical Mechanical Grinding) are the best solution for productivity and quality in wafer thinning. Highest die strength is achieved for the blade dicing and DBG (Dicing Before Grinding) due to the decreased backside chipping in thin wafer. As for DBG, it is necessary to improve the resin adhesive strength of H-WSS (Hard Wafer Support System).
Keywords :
grinding; polishing; wafer-scale integration; backside chipping; blade dicing; chemical mechanical grinding; dicing technology; die strength; dry polish; hard wafer support system; resin adhesive strength; stress relief; thin wafer; wafer thinning; Blades; Chemical products; Chemical technology; Glass; Plasma applications; Productivity; Resins; Stress; Thickness control; Wheels;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306548
