Title :
Mechanism of thermopower maximum of Bi-Sb semiconducting alloys
Author :
Itoh, M. ; Kitagawa, H. ; Kodama, T. ; Noguchi, H. ; Sota, S. ; Hasezaki, K. ; Noda, Y.
Author_Institution :
Dept. of Mater. Sci., Shimane Univ., Matsue, Japan
Abstract :
Temperature dependence of the Seebeck coefficient of Bi-Sb alloy, which is known to be an efficient thermoelectric material, is investigated in terms of the multi-carrier Boltzmann transport theory. The chemical potential is calculated self-consistently with the measured Hall coefficient, by solving an integral equation. The calculated chemical potential shows a clear indication of the extrinsic-to-intrinsic transition, and determines the temperature dependence of all the transport properties. In particular, maximum thermopower is bound to occur in the vicinity of the transition temperature. It is confirmed that the electrons in the L-point conduction band act as dominant carriers, whereas the valence bands at the L, T and H points serve primarily as carrier reservoirs. The electrons are sufficiently degenerate that the conventional analysis is misleading, corresponding to the unphysical solution of the equation.
Keywords :
Boltzmann equation; Hall effect; Seebeck effect; bismuth compounds; chemical potential; conduction bands; integral equations; semiconductor materials; thermoelectric power; valence bands; Bi-Sb semiconducting alloys; BiSb; H-point; Hall coefficient; L-point conduction band; Seebeck coefficient; T-point; carrier reservoir; chemical potential; degenerate electrons; extrinsic-intrinsic transition; integral equation; multicarrier Boltzmann transport theory; self-consistent calculation; thermoelectric material; thermopower; transition temperature; transport properties; valence band; Bismuth; Chemicals; Effective mass; Electrons; Hall effect; Integral equations; Physics; Semiconductivity; Temperature dependence; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
Print_ISBN :
0-7803-9552-2
DOI :
10.1109/ICT.2005.1519918