DocumentCode :
2213632
Title :
Thermoelectric properties of hole doped FeSb2
Author :
Bentien, A. ; Madsen, G.K.H. ; Johnsen, S. ; Iversen, B.B.
Author_Institution :
Dept. of Chem., Aarhus Univ., Denmark
fYear :
2005
fDate :
19-23 June 2005
Firstpage :
201
Lastpage :
203
Abstract :
FeSb2 is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb2-xSnx samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.
Keywords :
Fermi level; chemical exchanges; diamagnetic materials; energy gap; iron compounds; magnetic semiconductors; semiconductor doping; thermoelectricity; tin; Fe 3d levels; FeSb2:Sn; Fermi level; Sn substitution; band gap; diamagnetic semiconductor; hole doped FeSb2; thermoelectric properties; Chemistry; Electrons; Inorganic materials; Iron; Lattices; Photonic band gap; Tellurium; Temperature; Thermoelectricity; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
ISSN :
1094-2734
Print_ISBN :
0-7803-9552-2
Type :
conf
DOI :
10.1109/ICT.2005.1519919
Filename :
1519919
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2213632
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