High sensitivity pixel technology for a 1/4-inch PAL 430 k pixel IT-CCD

Author

Tsukamoto, Akira ; Kamisaka, Wataru ; Senda, Hiroyuki ; Niisoe, Naoto ; Aoki, Hiromitsu ; Otagaki, Tomoko ; Shigeta, Yoko ; Asaumi, Masaji ; Miyata, Yuji ; Sano, Yoshikazu ; Kuriyama, Toshihiro ; Terakawa, Sumio

Author_Institution

Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan

fYear

1996

fDate

5-8 May 1996

Firstpage

39

Lastpage

42

Abstract

A new pixel technology has been developed for a 1/4-inch 430 k (PAL) pixel IT-CCD (Inter-line Transfer Charge Coupled Device). The new pixel has a thin light shield made of tungsten silicide film and an inner-layer optical micro-lens pre-defined by BPSG flow. This process technology can reduce the pixel size to 22.6 μm² with improved sensitivity and reduced smear value. The sensitivity is increased by 30% and the smear value is reduced by 6dB compared to a conventional pixel technology. These characteristics are comparable to a conventional 1/3-inch 560 k pixel IT-CCD with the pixel size of 33.6 μm²

Keywords

CCD image sensors; integrated circuit technology; lenses; sensitivity; shielding; 0.25 in; 430 kpixel; B2O3-P2O5-SiO2; BPSG; BPSG flow; WSi; charge coupled device; high sensitivity pixel technology; inner-layer optical microlens; inter-line transfer CCD; process technology; smear value reduction; thin light shield; Aluminum; Apertures; Charge-coupled image sensors; Laboratories; Optical films; Optical refraction; Semiconductor diodes; Silicides; Tungsten; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Conference_Location

San Diego, CA

Print_ISBN

0-7803-3117-6

Type

conf

DOI

10.1109/CICC.1996.510508

Filename

510508