Title :
10 W High Efficiency 14V HBT Power Amplifier for Space Applications
Author :
Le Gallou, N. ; Villemazet, J.F. ; Cogo, B. ; Cazaux, J.L. ; Mallet, A. ; Lapierre, L.
Author_Institution :
ALCATEL SPACE, 26 Av. JF Champollion, 31037 Toulouse cedex, FRANCE. e-mail: Nicolas.Le-Gallou@space.alcatel.fr / Fax: +33 5 3435 6947
Abstract :
This paper presents the first development of a space-borne power amplifier using the recently developed high breakdown, high Power HBT HB20S process of UMS. The inverse F class Hybrid Power Amplifier has been designed using intensive simulation methods developed at Alcatel Space for MMICs, allowing to reach very high performances without manual tuning. The results 10 W / PAE > 65% obtained with a single chip at 1.5 GHz demonstrate the capability of the process to handle with very high power densities and efficiencies.
Keywords :
Circuit simulation; Electric breakdown; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Space technology; Temperature; Voltage;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340943
