Title :
Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material
Author :
Lee, Hey-Ryoung ; Choi, Samjong ; Cho, Kyoungah ; Sangsig Kim
Author_Institution :
Dept. of Electr. Eng. & Inst. for Nano Sci., Korea Univ., Seoul
Abstract :
Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.
Keywords :
annealing; capacitance measurement; germanium; hafnium compounds; high-k dielectric thin films; voltage measurement; HfO2; HfO2 - Binary; MOS capacitors; annealing; capacitance voltage measurement; gate material; germanium nanocrystals; high k dielectrics; Capacitance-voltage characteristics; Hafnium oxide; MOS capacitors; Ge NCs; HfO2; nano-floating gate; nitridation;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388802
