DocumentCode
2213723
Title
Wet-process deposition of TSV liner and metal films
Author
Truzzi, Claudio ; Raynal, Frederic ; Mevellec, Vincent
Author_Institution
Alchimer, Massy, France
fYear
2009
fDate
28-30 Sept. 2009
Firstpage
1
Lastpage
6
Abstract
This paper describes the wet electrografting deposition of insulator, diffusion barrier and copper seed layers inside high aspect ratio Through Silicon Vias (TSVs). Basic properties of each layer of this full wet stack have been characterized: electrical and thermo-mechanical properties of insulator and copper seed, barrier properties of diffusion barrier, contaminant levels, morphology, and adhesion.
Keywords
diffusion barriers; semiconductor device metallisation; vapour deposition; TSV liner; contaminant level; diffusion barrier; insulator; metal film; through silicon vias; wet electrografting deposition; wet process deposition; wet stack; Adhesives; Chemical industry; Chemical vapor deposition; Copper; Insulation; Polymers; Scanning electron microscopy; Silicon; Surface morphology; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-4511-0
Electronic_ISBN
978-1-4244-4512-7
Type
conf
DOI
10.1109/3DIC.2009.5306553
Filename
5306553
Link To Document