Enhancement of PL intensity by photonic crystal fabricated on GaAs substrate using nanoporous alumina mask

Author

Jung, Mi ; Lee, Seok ; Park, Min Chul ; Byun, Young Tae ; Jhon, Young Min ; Kim, Sun Ho ; Mho, Sun-il ; Kim, Keunjoo ; Woo, Deok Ha

Author_Institution

Photonics Res. Center, KIST, Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

436

Lastpage

437

Abstract

We fabricated photonic crystal structure on GaAs substrate using nanoporous alumina mask. Uniform arrays of nano-sized pores produced in anodic alumina were transferred into GaAs substrate by inductively coupled plasma reactive ion etching (ICP-RIE). The photonic crystal structure, the nanohole array with uniform diameter of 60 nm and interpore distance of 105 nm, was formed on GaAs substrate as replica of the alumina mask. Its photoluminescence (PL) showed enhanced intensity compared with that from GaAs substrate without its structure. The ICP-RIE technique using nanoporous alumina mask can be used as a prospective method in the fabrication of nano-devices for nanotechnology.

Keywords

masks; nanopatterning; nanoporous materials; optical fabrication; optical materials; photoluminescence; photonic crystals; replica techniques; sputter etching; Al₂O₃; Al₂O₃ - Binary; GaAs; GaAs - Surface; ICP-RIE; anodic alumina; inductively coupled plasma reactive ion etching; interpore distance; nano-sized pores; nanohole array; nanopatterning; nanoporous alumina mask; photonic crystal structure fabrication; replica; Argon; Etching; Fabrication; Gallium arsenide; Light emitting diodes; Nanoporous materials; Nanostructures; Optical pumping; Photonic crystals; Substrates; ICP-RIE; PL; nanoporous alumina; photonic crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388804

Filename

4388804