DocumentCode :
2213923
Title :
Electrical characteristics of AC dielectrophoretically aligned ZnO nanowires
Author :
Lee, Seung-Yong ; Umar, Ahmad ; Suh, Duk-Il ; Park, Ji-Eun ; Hanh, Yoon-Bong ; Lee, Sang-Kwon
Author_Institution :
Chonbuk Nat.Univ., Jeonju
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
452
Lastpage :
453
Abstract :
We report on a straightforward and successful AC dielectrophoresis (DEP) method that can be used to align and manipulate ZnO nanowires as well as for extracting the electrical properties of the semiconductor nanowires. The dielectrophoresis was accomplished at a frequency of 20 MHz with five different AC electric field (1, 5, 10, 15, 20 Vp.p). The DEP results indicated that the number of aligned ZnO nanowires increased with increasing AC voltages. From the transport measurements of our AC DEP prepared ZnO nanowires using conventional three-probe schemes in field-effect transistor structures, the estimated carrier mobility from the gate-modulation characteristics was on the order of~15.9 cm2/V dot dots. We found that AC DEP offers great opportunities for electrical characteristics of semiconductor nanowires and for further fundamental research in electronics and photonics device applications.
Keywords :
II-VI semiconductors; carrier mobility; electrophoresis; nanotechnology; nanowires; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; AC dielectrophoresis; ZnO; ZnO - Binary; carrier mobility; electrical properties; field-effect transistor structures; frequency 20 MHz; gate-modulation; semiconductor nanowires; Dielectrophoresis; Electric variables; Electrodes; FETs; Nanoscale devices; Nanowires; Photonics; Substrates; Suspensions; Zinc oxide; Dielectrophoresis (DEP); Field-Effect Transistor (FET); Photo-Lithography; ZnO Nanowire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388812
Filename :
4388812
Link To Document :
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